2008. 6. 10 1/5 semiconductor technical data kmb054n40db n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for back-light inverter and power supply. features h v dss =40v, i d =54a. h low drain-source on resistance. : r ds(on) =8.5m ? (max.) @ v gs =10v : r ds(on) =11m ? (max.) @ v gs =4.5v h super high dense cell design. h high power and current handling capability. maximum rating (ta=25 ? unless otherwise noted) pin connection (top view) gs d 1 2 3 1 2 3 dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 2. drain 3. source kmb 054n40 db marking type name lot no note 1) r thjc means that the infinite heat sink is mounted. note 2) surface mounted on 1 ? 1 pad of 2 oz copper. characteristic symbol n-ch unit drain-source voltage v dss 40 v gate-source voltage v gss ? 20 v drain current dc@t c =25 ? (note1) i d 54 a pulsed (note2) i dp 100 drain-source-diode forward current i s 100 a drain power dissipation @t c =25 ? (note1) p d 45 w @ta=25 ? (note2) 3.1 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to case (note1) r thjc 2.8 ? /w thermal resistance, junction to ambient (note2) r thja 40 ? /w
2008. 6. 10 2/5 kmb054n40db revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i d =250 a 40 - - v drain cut-off current i dss v gs =0v, v ds =32v - - 1 a gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1 1.9 3 v drain-source on resistance r ds(on)* v gs =10v, i d =14a - 6.5 8.5 m ? v gs =4.5v, i d =11a - 8.5 11 v gs =10v, i d =14a, t j =125 ? - 10.4 14 forward transconductance g fs* v ds =10v, i d =20a - 58 - s dynamic input capacitance c iss v ds =20v, f=1mhz, v gs =0v - 1280 - pf ouput capacitance c oss - 250 - reverse transfer capacitance c rss - 125 - total gate charge v gs =10v q g * v ds =20v, v gs =10v, i d =14a - 25.4 - nc v gs =5v q g * - 13.8 - gate-source charge q gs * - 5.7 - gate-drain charge q gd * - 5.4 - turn-on delay time t d(on) * v dd =20v, v gs =10v i d =1a, r g =6 ? - 19 - ns turn-on rise time t r * - 16 - turn-off delay time t d(off) * - 60 - turn-off fall time t f * - 14 - source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =14a - 0.8 1.2 v note>* pulse test : pulse width <300 k , duty cycle < 2%
2008. 6. 10 3/5 kmb054n40db revision no : 0
2008. 6. 10 4/5 kmb054n40db revision no : 0
2008. 6. 10 5/5 kmb054n40db revision no : 0
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